please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook SSM3K01F ? small package ? low on resistance : ron = 120 m ? (max) (v gs = 4 v) : ron = 150 m ? (max) (v gs = 2.5 v) ? low gate threshold voltage: v th = 0.6~1.1 v (v ds = 3 v, i d = 0.1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 10 v dc i d 1.3 drain current pulse i dp 2.6 a drain power dissipation p d 200 mw channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). marking equivalent circuit handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic electr icity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devi ces should be made of anti-static materials. unit: mm weight: 0.012 g (typ.) smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 10 v, v ds = 0 ? ? 5 a drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 30 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.6 ? 1.1 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 0.65 a (note) 2.0 ? ? s i d = 0.65 a, v gs = 4 v (note) ? 85 120 drain-source on resistance r ds (on) i d = 0.65 a, v gs = 2.5 v (note) ? 115 150 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 152 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 41 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 102 ? pf turn-on time t on ? 45 ? switching time turn-off time t off v dd = 15 v, i d = 0.5 a, v gs = 0~2.5 v, r g = 4.7 ? 69 ? ns note: pulse test switching time test circuit precaution v th can be expressed as voltage between gate and source when low operat ing current value is i d = 100 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consid eration for using the device. SSM3K01F smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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